High-temperature (450°C) operation of InGaP solar cell under N2 ambient using refractory metal contacts.
| Autor: | Elarde, V. C., Cardwell, D., Hillier, G., Wibowo, A., Hoheisel, R., Gonzalez, M., Lumb, M., Tomasulo, S., Kotulak, N., Scheiman, D., Maximenko, S., Jenkins, P., Walters, R., Heemstra, D., Fay, P., Wanlass, M., Osowski, M., Pan, N. |
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| Zdroj: | 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC); 2016, p2337-2340, 4p |
| Databáze: | Complementary Index |
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