Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire MOSFETs induced by various discrete random dopants.
| Autor: | Sung, Wen-Li, Chang, Han-Tung, Chen, Chieh-Yang, Chao, Pei-Jung, Li, Yiming |
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| Zdroj: | 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO); 2016, p951-954, 4p |
| Databáze: | Complementary Index |
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