| Autor: |
Rahou, Fatima Zohra, Bouazza, A.Guen, Bouazza, B. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2016, Vol. 8 Issue 4, p1-4, 4p |
| Abstrakt: |
In this paper, we present the results of a 3D-numerical simulation of SOI TRI-GATE FinFET transistor. 3D-device structure, based on technology SOI (Silicon-On-Insulator) is described and simulated by using SILVACO TCAD tools and we compare the electrical characteristics results for Titanium Nitride (TiN) fabricated on Al2O3 (k ~ 9), HfO2 (k ~ 20) and La2O3 (k ~ 30) gate dielectric. Excellent dielectric properties such as high-k constant, low leakage current, threshold voltage and electrical characteristics were demonstrated. The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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