| Autor: |
De Souza, J. P., Cima, C. A., Fichtner, P. F. P., Boudinov, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/2004, Vol. 95 Issue 3, p877-880, 4p, 2 Black and White Photographs, 2 Graphs |
| Abstrakt: |
In this paper we discuss the structural modifications observed in a buried amorphous Si (a-Si) layer containing high oxygen concentration level (up to ∼3 at. %) after being implanted at elevated temperature with [sup 16]O[sup +] ions. For implants conducted at temperatures lower than 150 °C, the a-Si layer expands via layer by layer amorphization at the front and back amorphous–crystalline (a–c) interfaces. When performed at temperatures above 150 °C, the implants lead to the narrowing of the buried a-Si layer through ion beam-induced epitaxial crystallization at both a–c interfaces. Cross section transmission electron microscopy analysis of samples implanted at 400 °C revealed an array of microtwins and a dislocation network band in the recrystallized material. In samples implanted at 550 °C, only a buried dislocation network band is observed. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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