Structure of interfaces in GaN/AlN and Ge/Si multilayered heterosystems by XAFS spectroscopy.
| Autor: | S B Erenburg, S V Trubina, K S Zhuravlev, T V Malin, V A Zinovyev, A V Dvurechenskii, P A Kuchinskaya, K O Kvashnina |
|---|---|
| Zdroj: | Journal of Physics: Conference Series; 2016, Vol. 774 Issue 1, p1-1, 1p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|