Transient and quasi-stationary simulation of heat and mass transfer in Czochralski silicon crystal growth.

Autor: A. Voigt, C. Weichmann, J. Nitschkowski, E. Dornberger, R. Hölz
Zdroj: Crystal Research & Technology; Jun2003, Vol. 38 Issue 6, p499-505, 7p
Databáze: Complementary Index