| Autor: |
Hojoon Lim, Hyeok-Jun Yang, Ji Woong Kim, Jong-Seung Bae, Jin-Woo Kim, Beomgyun Jeong, Crumlin, Ethan, Park, Sungkyun, Bongjin Simon Mun |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 120 Issue 20, p1-6, 6p, 1 Chart, 5 Graphs |
| Abstrakt: |
Oxygen post-annealing effects on tin (Sn) doped indium oxide (ITO) film are investigated with various analytical tools as a function of temperature, including in situ XRD, ambient pressure XPS (APXPS), and Hall measurement. As the annealing temperature increases up to 200 °C under the oxygen pressure of 100 mTorr, the in situ XRD shows the evidence of crystallization of the film while the AP-XPS reveals the formation of oxygen vacancy and Sn4+ states on surface. In addition, the mobility of ITO thin film is increased as the post-annealing temperature increases, supporting the results of both in situ XRD and AP-XPS. The results of angle-resolved XPS reveal that the degree of Sn segregation changes little after post-annealing procedure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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