| Autor: |
Lu, Ming-Yen, Chen, Hung-Yi, Tsai, Cheng-Yu, Tseng, Yen-Ti, Kuo, Yu-Ting, Wang, Hsiang-Chen, Lu, Ming-Pei |
| Předmět: |
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| Zdroj: |
Chemical Communications; 11/11/2016, Vol. 52 Issue 87, p12853-12856, 4p |
| Abstrakt: |
In this study p-type ZnO nanorod (NR) arrays were grown using a low-temperature hydrothermal method in the presence of various concentrations of Sb in the doping solution. X-ray photoelectron spectroscopy revealed the atomic percentages and chemical states of the Sb dopant atoms in the p-type ZnO NR arrays. Photoluminescence and electrical measurements confirmed the p-type characteristics of the Sb-doped ZnO NR arrays. Sequential growth of n- and p-ZnO was then implemented to form p–n ZnO nanojunction arrays. The photovoltaic properties of the p–n ZnO nanojunction devices were investigated under 365 nm UV light; the short-circuit current densities and open-circuit voltages exhibited linear and logarithmic dependence, respectively, on the power density of the UV light. In addition, the p–n ZnO nanojunction devices displayed a rapid response to UV light at zero bias, with a linear correlation between the responsivity and the incident light power. Such low-temperature growth of p–n ZnO nanojunctions appears to be a facile strategy for fabricating junctioned nanostructures with applications in energy-harvesting and self-driven photodetecting optoelectronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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