| Autor: |
Dongjun Lee, Ikhyung Joo, Changsub Lee, Duheon Song, Byoungdeog Choi |
| Zdroj: |
Japanese Journal of Applied Physics; Nov2016, Vol. 55 Issue 11, p1-1, 1p |
| Abstrakt: |
We investigated the abnormal degradation of high-voltage p-type MOSFET (HV pMOSFET) under negative AC gate bias stress. In HV pMOSFET with n+ polycrystalline silicon (poly-Si) gate, the abnormal degradation occurs after the gradual degradation during negative AC stress. The abnormal degradation is suppressed by changing the gate material from n+ poly-Si to p+ poly-Si, and it is caused by hot holes produced by the impact ionization near the surface when electrons move from the gate toward the gate oxide. We suggest a possible mechanism to explain the improvement of degradation by using p+ poly-Si as a gate material. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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