| Autor: |
Kazuhisa Sato, Seishi Abe |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 120 Issue 15, p1-6, 6p, 1 Color Photograph, 4 Black and White Photographs, 2 Graphs |
| Abstrakt: |
The microstructure of polycrystalline PbTe1-xSex-ZnSe composite thin films has been studied by scanning transmission electron microscopy and electron diffraction. The films were prepared by the one-step synthesis method using simultaneous evaporation of PbTe and ZnSe. The nanocrystals of PbTe1-xSex are formed in a ZnSe matrix. Tellurium concentration can be tuned by controlling the PbTe evaporation source temperatures between 753K and 793 K. Binary PbSe nanocrystals were formed at 753 K, while ternary PbTe1-xSex nanocrystals were formed at 793 K. The nanocrystals grow in a granular shape at the initial stage of film growth, and the morphology changes to nanowire-shape as the film grows, irrespective of the Te concentration. The ternary PbTe1-xSex nanocrystals were composed of two phases with different Te concentration; Te-rich (Se-poor) granular crystals were formed near the bottom half parts of the film and Te-poor (Se-rich) nanowires were formed at the upper half parts of the film. Columnar ZnSe crystals contain high-density {111} stacking faults due to the low stacking fault energy of ZnSe. A balance of deposition and reevaporation on the substrate during the film growth will be responsible for the resultant nanocrystal morphology. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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