| Autor: |
Morozov, A.V., Kozhanov, A.E., Artamkin, A.I., Slyn'ko, E.I., Slyn'ko, V.E., Dobrovolski, W.D., Story, T., Khokhlov, D.R. |
| Předmět: |
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| Zdroj: |
Semiconductors; Jan2004, Vol. 38 Issue 1, p27-30, 4p |
| Abstrakt: |
Fermi level pinning and persistent photoconductivity are observed in PbTe:(Mn, Cr) at T < 35 K. The impurity level that pins the chemical potential level shifts toward the bottom of the conduction band with increasing manganese content. Negative magnetoresistance at low temperatures is observed. The magnitude of this effect amounts to about 30% at T = 4.2 K. The effect is caused by the specific features of electron transport through the impurity band in a magnetic field. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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