| Autor: |
Sreseli, O.M., Goryachev, D.N., Belyakov, L.V., Vul', S.P., Zakharova, I.B., Alekseeva, E.A. |
| Předmět: |
|
| Zdroj: |
Semiconductors; Jan2004, Vol. 38 Issue 1, p120-123, 4p |
| Abstrakt: |
The interaction of a matrix of silicon nanocrystallites (porous silicon layer) with embedded fullerene molecules C[sub 60] was studied. The degradation of fullerene-containing layers as a result of irradiation with a strongly absorbed laser light was explored. It is shown that the layers with highest stability are obtained after high-temperature annealing in hydrogen. In this case, the photoluminescence spectra remain virtually unchanged when the layers are kept in air and irradiated with a high-intensity laser irradiation. Possible mechanisms of the phenomena studied are discussed. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
