| Autor: |
Kwon, Hyukyun, Kim, Mincheol, Cho, Hyunsu, Moon, Hanul, Lee, Jongjin, Yoo, Seunghyup |
| Předmět: |
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| Zdroj: |
Advanced Functional Materials; 10/11/2016, Vol. 26 Issue 38, p7023-7023, 1p |
| Abstrakt: |
In order to overcome the performance limitation of conventional lateral‐channel organic field‐effect transistor (OFET) structures, vertical field‐effect transistors (VFETs) have recently been investigated. On page 6888, H. Moon, J. Lee, S. Yoo, and co‐workers present an organic vertical field‐effect transistor with key design parameters to enhance device performance. These results show better performance than lateral‐channel OFETs in terms of driving capability. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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