Threshold switching and electrical self-oscillation in niobium oxide films.

Autor: Xinjun Liu, Shuai Li, Nandi, Sanjoy Kumar, Venkatachalam, Dinesh Kumar, Elliman, Robert Glen
Předmět:
Zdroj: Journal of Applied Physics; 2016, Vol. 120 Issue 12, p124102-1-124102-10, 10p, 1 Chart, 5 Graphs
Abstrakt: Electrical self-sustained oscillations have been observed in a broad range of two-terminal systems and are of interest as possible building blocks for bio-inspired neuromorphic computing. In this work, we experimentally explore voltage-controlled oscillations in NbOx devices with a particular focus on understanding how the frequency and waveform are influenced by circuit parameters. We also introduce a finite element model of the device based on a Joule-heating induced insulatormetal transition. The electroformed device structure is represented by a cylindrical conductive channel (filament) comprised of NbO/NbO2 zones and surrounded by an Nb2O5-x matrix. The model is shown to reproduce the current-controlled negative differential resistance observed in measured current-voltage curves, and is combined with circuit elements to simulate the waveforms and dynamics of an isolated Pearson-Anson oscillator. Such modeling is shown to provide considerable insight into the relationship between the material response and device and circuit characteristics. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index