| Autor: |
J A Guerra, F De Zela, K Tucto, L Montañez, J A Töfflinger, A Winnacker, R Weingärtner |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 9/21/2016, Vol. 49 Issue 37, p1-1, 1p |
| Abstrakt: |
The effect of the annealing temperature on the light emission intensity of Tb-doped a-SiC:H thin films was investigated for different Tb concentrations under sub-bandgap photon excitation. We present a detailed discussion of rare-earth thermal activation in order to determine the optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity. Two independent processes that enhance the emission intensity are identified and incorporated in a rate equation. These are the thermally-induced increase of luminescence centers and the inhibition of host-mediated non-radiative recombinations. Finally, the presented analysis revealed a suppression of the self-quenching effect when increasing the annealing temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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