Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals.

Autor:	Roshchin, V., Dshkhunyan, V., Petukhov, I., Sen'chenko, K., Vagin, M.
Předmět:	SILICON crystals ELECTROCHEMICAL analysis HIGH-density plasmas CRYSTAL structure PERITECTIC reactions
Zdroj:	Russian Microelectronics; Sep2016, Vol. 45 Issue 5, p324-328, 5p
Abstrakt:	Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn-Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals is investigated and the conditions of the vertical growth of the structures are determined. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink