| Autor: |
Sadowski, Jerzy T., Nagao, Tadaaki, Saito, Mineo, Yaginuma, Shin, Fujikawa, Yasunori, Thayer, Gayle E., Tromp, Rudolf M., Nakajima, Kazuo, Sazaki, Gen, Ohno, Takahisa, Sakurai, Toshio |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2003, Vol. 696 Issue 1, p738-744, 7p |
| Abstrakt: |
Growth of thin metal films on semiconductors has long been subjected to extensive experimental and theoretical studies. As the applicability of well-ordered structures in electronic, optical or magnetic devices depends significantly on their size and distribution, it is necessary to understand the processes governing the growth of such structures. In this paper we present results of an investigation of room temperature growth of Bi on Si(111). We clarified that rotationally disordered, pseudo-cubic, Bi{012} islands with uniform height are formed in the initial stages of Bi film growth. With increasing of the amount of Bi on the surface, islands interconnect maintaining their uniform height. This process is further accompanied by the unique and unexpected structural phase transition of the {012} film into a hexagonal Bi(001) film. © 2003 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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