The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley.

Autor:	Siddiqua, Poppy, O'Leary, Stephen K.
Předmět:	MONTE Carlo method ELECTRON transport GALLIUM nitride SEMICONDUCTORS ZINC
Zdroj:	Journal of Applied Physics; 9/7/2016, Vol. 120 Issue 9, p1-12, 12p, 2 Charts, 7 Graphs
Abstrakt:	Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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