| Autor: |
Carmody, C., Tan, H. H., Jagadish, C., Douhéret, O., Maknys, K., Anand, S., Zou, J., Dao, L., Gal, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/2004, Vol. 95 Issue 2, p477-482, 6p, 2 Black and White Photographs, 1 Chart, 3 Graphs |
| Abstrakt: |
Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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