Effect of low-energy X-ray radiation on the electrophysical properties of silicon crystals of n- and p-type conductivity.

Autor: Steblenko, L., Podolyan, A., Nadtochiy, A., Kuryliuk, A., Kalinichenko, D., Kobzar, Yu., Krit, A., Naumenko, S.
Zdroj: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; May2016, Vol. 10 Issue 3, p672-675, 4p
Abstrakt: We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy ( E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by measuring the surface distribution of the amplitude and decay time of the photovoltage, is found. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
Externí odkaz: