| Autor: |
Xin Jiang, Panchula, Alex F., Parkin, Stuart S.P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/22/2003, Vol. 83 Issue 25, p5244-5246, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Magnetic tunnel junctions with ZnSe barriers were fabricated with a combination of magnetron sputtering, ion beam sputtering, and effusion cell evaporation. Tunneling magnetoresistance values of ∼10% are observed at room temperature. The temperature and barrier thickness dependences of the junction resistance and tunneling magnetoresistance are consistent with a predominant direct tunneling mechanism when the barrier thickness is less than ∼10 nm thick. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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