| Autor: |
Yaqoob, Faisal, Mengbing Huang |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/28/2016, Vol. 120 Issue 4, p1-8, 8p, 2 Charts, 9 Graphs |
| Abstrakt: |
This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ~150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2×1016cm-2, close to the depth ~250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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