| Autor: |
Stoupin, Stanislav, Raghothamachar, Balaji, Dudley, Michael, Zunping Liu, Trakhtenberg, Emil, Lang, Keenan, Goetze, Kurt, Sullivan, Joseph, Macrander, Albert |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1741 Issue 1, p1-4, 4p, 3 Diagrams |
| Abstrakt: |
Projection X-ray topography of single crystals is a classic technique for the evaluation of intrinsic crystal quality of large crystals. In this technique a crystal sample and an area detector (e.g., X-ray film) collecting intensity of a chosen crystallographic reflection are translated simultaneously across an X-ray beam collimated in the diffraction scattering plane (e.g., [1, 2]). A bending magnet beamline of a third-generation synchrotron source delivering x-ray beam with a large horizontal divergence, and therefore, a large horizontal beam size at a crystal sample position offers an opportunity to obtain X-ray topographs of large crystalline samples (e.g., 6-inch wafers) in just a few exposures. Here we report projection X-ray topography system implemented recently at 1-BM beamline of the Advanced Photon Source. A selected X-ray topograph of a 6-inch wafer of 4H-SiC illustrates capabilities and limitations of the technique. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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