| Autor: |
Osamu Kubo, Takuro Otsuka, Shouta Okasaka, Shun Osaka, Hiroshi Tabata, Mitsuhiro Katayama |
| Zdroj: |
Japanese Journal of Applied Physics; Aug2016, Vol. 55 Issue 8S1, p1-1, 1p |
| Abstrakt: |
The structural and electronic properties of a BaSi2(100) film as well as Ba-induced surface reconstructions formed on Si(111) have been investigated by scanning tunneling microscopy and spectroscopy (STS). At a low Ba deposition rate (∼0.1 nm/min), no silicide structures grow but only Si surface reconstructions are formed. In contrast, when Ba atoms are evaporated onto the Si(111) surface at 600 °C at a deposition rate of ∼1 nm/min, most of the surface was covered with a striped structure, which is assigned to the BaSi2(100) surface terminated with Si4 tetrahedra, which is consistent with a previously reported structural model [Okasaka et al., Surf. Sci. 635, 115 (2015)]. On an identical sample, another surface phase having -R30° periodicity was observed. This would also be the surface terminated with Si4 tetrahedra but with two-thirds of Si4 tetrahedra missing owing to the shortage of Si supply from the substrate. STS spectra obtained for both the striped and -R30° periodic structures exhibit a bandgap of 1.3 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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