| Autor: |
Xie, H., Prioli, R., Fischer, A. M., Ponce, F. A., Kawabata, R. M. S., Pinto, L. D., Jakomin, R., Pires, M. P., Souza, P. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 120 Issue 3, p034301-1-034301-6, 6p, 1 Black and White Photograph, 4 Diagrams, 2 Graphs |
| Abstrakt: |
The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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