| Autor: |
V S Senthil Srinivasan, Inga A Fischer, Lion Augel, Anja Hornung, Roman Koerner, Konrad Kostecki, Michael Oehme, Erlend Rolseth, Joerg Schulze |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Aug2016, Vol. 31 Issue 8, p1-1, 1p |
| Abstrakt: |
As Ge1−xSnx is being investigated for CMOS applications, obtaining contacts to n-type Ge1−xSnx with low specific contact resistivity (ρc) is a major concern. Here, we present results on specific contact resistivities of Sb doped n-type Ge1−xSnx with 0 ≤ x ≤ 0.08 also with varying doping concentrations using Ni, Ag and Mn as contact metals. Our results show that Ni offers the lowest ρc for all x values of Ge1−xSnx. The lowest ρc measured for Ni contacts on highly n-doped Ge0.92Sn0.08 is 2.29 × 10−6 Ω cm2. We find a strong dependence of the specific contact resistivity on doping, which we attribute to the fact that strong Fermi level pinning is present in metal/n-Ge1−xSnx contacts. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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