| Autor: |
Jin Kim, Dong, Oh, Joon-Ho, Soo Kim, Han, Soo Kim, Young, Jeong, Manhee, Goo Kang, Chang, Jin Jo, Woo, Choi, Hyojeong, Guk Kim, Jong, Hee Lee, Seung, Ho Ha, Jang |
| Předmět: |
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| Zdroj: |
Materials Science-Poland; Jun2016, Vol. 34 Issue 2, p297-301, 5p |
| Abstrakt: |
TlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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