| Autor: |
Chikoidze, E., von Bardeleben, H. J., Akaiwa, K., Shigematsu, E., Kaneko, K., Fujita, S., Dumont, Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 120 Issue 2, p025109-1-025109-9, 9p, 2 Charts, 11 Graphs |
| Abstrakt: |
We investigated the effect of Sn doping on the optical, electrical, and magneto transport properties of epitaxial α-Ga2O3 thin films grown by mist-Chemical Vapour Deposition. Sn introduces a shallow donor level at ∼0.1 eV and has a high solubility allowing doping up to 1020cm-3. The lowest obtained resistivity of the films is 2.0×10-1Ω cm. The Sn doped films with a direct band gap of 5.1 eV remain transparent in the visible and UV range. The electrical conduction mechanism and magneto-transport have been investigated for carrier concentrations below and above the insulatormetal transition. The magnetic properties of the neutral Sn donor and the conduction electrons have been studied by electron spin resonance spectroscopy. A spin S=1/2 state and C3V point symmetry of the neutral Sn donor is found to be in good agreement with the model of a simple SnGa center. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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