| Autor: |
Dompreh, K. A., Mensah, N. G., Mensah, S. Y., Fosuhene, S. K. |
| Předmět: |
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| Zdroj: |
Low Temperature Physics; Jun2016, Vol. 42 Issue 6, p466-469, 4p, 2 Graphs |
| Abstrakt: |
Amplification of acoustic in-plane phonons due to an external temperature gradient (rT) in single-layer graphene (SLG) was studied theoretically. The threshold temperature gradient (▿ T)g0 and the threshold voltage (▿ T)g0 in SLG were evaluated. For T = 77 K, the calculated value for (▿ T)g0 = 746:8 K=cm and (▿ T)g0= 6:6mV. The calculation was done in the hypersound regime. Further, the dependence of the normalized amplification (Г/Г0)on the frequency ωq and ▿T/T were evaluated numerically and presented graphically. The calculated threshold temperature gradient(▿ T)g0 for SLG was higher than that obtained for homogeneous semiconductors (n-InSb)(▿T)hom0≈ 103 K/cm, superlattices )(▿T)SL0≈ 384 K/cm, and cylindrical quantum wire )(▿T)cqw0≈ 102 K/cm. This makes SLG a much better material for thermoelectric phonon amplification. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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