| Autor: |
Chiyu Zhu, Smith, David J., Nemanich, Robert J. |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Sep/Oct2012, Vol. 30 Issue 5, p1-12, 8p |
| Abstrakt: |
A gate stack structure with a thin ZnO layer between an oxidized Si(100) surface and an alloyed hafnium and lanthanum oxide (HfO2-La2O3) layer was prepared by plasma enhanced atomic layer deposition at ~175°C. High resolution electron microscopy indicated an amorphous structure of the deposited layers. The electronic properties were characterized with x-ray and ultraviolet photoemission spectroscopy. A significant amount of excess oxygen was observed in the as-deposited ZnO and (HfO2-La2O3) layers. A helium plasma postdeposition treatment can partially remove the excess oxygen in both layers. The band alignment of this structure was established for an n-type Si substrate. A valence band offset of 1.5 6 0.1 eV was measured between a thin ZnO layer and a SiO2 layer. The valence band offset between HfO2-La2O3 (11% HfO2 and 89% La2O3) and ZnO was almost negligible. The band relationship developed from these results demonstrates confinement of electrons in the ZnO film as a channel layer for thin film transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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