A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET.

Autor: Tripathi, Awneesh, Mainali, Krishna, Madhusoodhanan, Sachin, Yadav, Akshat, Vechalapu, Kasunaidu, Bhattacharya, Subhashish
Zdroj: 2016 IEEE Applied Power Electronics Conference & Exposition (APEC); 2016, p2076-2082, 7p
Databáze: Complementary Index