| Autor: |
Jin An, Sung, Min Yook, Jong, Woong Yoon, Tae, Kim, Hyeok, Chul Kim, Jun, Yook, Jong‐Gwan, Park, Youngcheol, Kim, Dongsu |
| Předmět: |
|
| Zdroj: |
Microwave & Optical Technology Letters; Sep2016, Vol. 58 Issue 9, p2178-2182, 5p |
| Abstrakt: |
ABSTRACT This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2178-2182, 2016 [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text