| Autor: |
Surodin, S. I., Nikolitchev, D. E., Kryukov, R. N., Belov, A. I., Korolev, D. S., Mikhaylov, A. N., Tetelbaum, D. I. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1748 Issue 1, p1-6, 6p, 1 Chart, 4 Graphs |
| Abstrakt: |
The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the implanted layer. It is shown that practically entire implanted gallium undergoes outdiffusion, but the preliminary implantation of nitrogen for the synthesis of a barrier SiNx layer makes it possible to avoid the essential loss of gallium. In this case, about 14% of implanted gallium bond to nitrogen. The obtained data are discussed from the viewpoint of the possibility of ion synthesis of GaN inclusions in silicon matrix. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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