| Autor: |
Emelyanov, V. M., Filimonov, E. D., Kozhukhovskaia, S. A., Mintairov, M. A., Shvarts, M. Z. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1748 Issue 1, p1-10, 10p, 2 Diagrams, 1 Chart, 4 Graphs |
| Abstrakt: |
A mathematical model of recombination radiation transfer in multilayer heterostructures for calculating photoluminescent coupling transfer function has been developed. The photoluminescent coupling effectiveness for the GaInP-GaInAs and GaInAs-Ge subcell pairs being a part of multijunction GaInP/GaInAs/Ge SCs has been investigated. The simulation results were compared with experimental data. The electroluminescence effectiveness estimation for a wide band gap subcell in each pair has been performed. An anomalously high value of the photoluminescent coupling for the GaInAs-Ge subcell pair has been observed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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