| Autor: |
Brovman, Yuri M., Small, Joshua P., Yongjie Hu, Ying Fang, Lieber, Charles M., Kim, Philip |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 6/21/2016, Vol. 119 Issue 23, p234304-1-234304-4, 4p, 1 Diagram, 2 Graphs |
| Abstrakt: |
We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes, respectively. At room temperature, peak TEP value of ∼300 μV/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values is used to estimate the carrier doping of Si nanowires. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
