| Autor: |
Nippert, Felix, Nirschl, Anna, Schulz, Tobias, Callsen, Gordon, Pietzonka, Ines, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Strassburg, Martin, Albrecht, Martin, Hoffmann, Axel |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 119 Issue 21, p215707-1-215707-6, 6p, 3 Diagrams, 4 Graphs |
| Abstrakt: |
We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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