| Autor: |
강동민, 민병규, 이종민, 윤형섭, 김성일, 안호균, 김동영, 김해천, 임종원, 남은수 |
| Předmět: |
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| Zdroj: |
Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji; 1/1/2016, Vol. 27 Issue 1, p76-79, 4p |
| Abstrakt: |
This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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