| Autor: |
이휘섭, 임원섭, 강현욱, 이우석, 이형준, 윤정상, 이동우, 양영구 |
| Zdroj: |
Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji; 2/1/2016, Vol. 27 Issue 2, p108-114, 7p |
| Abstrakt: |
This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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