| Autor: |
Marco Malinverni, Camille Tardy, Marco Rossetti, Antonino Castiglia, Marcus Duelk, Christian Vélez, Denis Martin, Nicolas Grandjean |
| Zdroj: |
Applied Physics Express; Jun2016, Vol. 9 Issue 6, p1-1, 1p |
| Abstrakt: |
We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n+-type GaN layer deposited on top of the structure. The low sheet resistance of the n+-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n+-GaN top layer and the p++-GaN layer. Continuous-wave lasing at 400 nm with an output power of 100 mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA·cm−2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
