| Autor: |
Patidar, Manju Mishra, Panda, Richa, Gorli, V. R., Gangrade, Mohan, Nath, R., Ganesan, V. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1731 Issue 1, p1-3, 3p, 8 Graphs |
| Abstrakt: |
Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd1-xSnxS (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2 relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in 1, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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