| Autor: |
Singh, Ch. Kishan, Tah, T., Sunitha, D. T., Polaki, S. R., Madapu, K. K., Ilango, S., Dash, S., Tyagi, A. K. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1731 Issue 1, p1-3, 3p, 1 Color Photograph, 1 Graph |
| Abstrakt: |
Aluminium (metal) induced crystallization of amorphous Ge in bilayer and multilayer Ge/Al thin films deposited on quartz substrate at temperature well below the crystallization temperature of bulk Ge is reported. The crystallization of poly-Ge proceeds via formations of dendritic crystalline Ge grains in the Al matrix. The observed phases were characterized by Raman spectroscopy and X-ray diffraction. The microstructure of Al thin film layer was found to have a profound influence on such crystallization process and formation of dendritic grains. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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