| Autor: |
Khokhar, Anita, Goyal, Parveen K., Thakur, O. P., Sreenivas, K. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1731 Issue 1, p1-3, 3p, 4 Graphs |
| Abstrakt: |
The structure and ferroelectric properties of excess bismuth doped barium bismuth titanate BaBi4+dTi4O15 (δ =2 - 10 wt.%)) ceramics prepared by solid-state reaction method have been investigated. X-ray diffraction (XRD) confirms the formation of a single phase material with a change in the orthorhombic distortion with varying excess of bismuth content. There is no change in the phase transition temperature (Tm) while the relaxor behaviour has been modified significantly with excess of bismuth doping. Saturated hysteresis loops with high remnant polarization (Pr ~ 12.5 µC/cm²), low coercive fields (Ec ~26 kV/cm) are measured and a high piezoelectric coefficient (d33 ~ 29 pC/N) is achieved in poled BaBi4Ti4O15 ceramics prepared with up to 8 wt.% of excess bismuth oxide. The improvement in the ferroelectric properties with increase in the excess bismuth content in BaBi4Ti4O15 ceramics has been explained in terms of changing oxygen vacancy concentration and structural relaxation. Tunable ferroelectric materials can be obtained by manipulating the doping amount of excess bismuth. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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