| Autor: |
Kunets, Vas. P., Müller, U., Dobbert, J., Pomraenke, R., Tarasov, G. G., Masselink, W. T., Kostial, H., Kissel, H., Mazur, Yu. I. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/15/2003, Vol. 94 Issue 12, p7590-7593, 4p, 4 Graphs |
| Abstrakt: |
The generation–recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al[sub 0.30]Ga[sub 0.70]As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ[sub 0]≃1×10[sup -11] cm[sup 2], and a total integrated defect concentration of about N[sub ts]≃1.4×10[sup 10] cm[sup -2]. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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