Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations.
| Autor: | Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Seoane, Natalia, Indalecio, Guillermo, Lindberg, Jari, Dettmer, Wulf, Peric, Djordje, Garcia-Loureiro, Antonio J., Kalna, Karol |
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| Zdroj: | 2016 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS); 2016, p52-55, 4p |
| Databáze: | Complementary Index |
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