| Autor: |
Kobune, Masafumi, Matsuura, Osamu, Matsuzaki, Tomoaki, Sawada, Tatsuya, Fujisawa, Hironori, Shimizu, Masaru, Niu, Hirohiko |
| Předmět: |
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| Zdroj: |
Ferroelectrics; Jul2002, Vol. 271 Issue 1, p199-204, 6p |
| Abstrakt: |
Pt/(Pb,La)(Zr,Ti)O 3 (PLZT)/initial PLZT nuclei (i-PLZT)/Pt/MgO structures are fabricated by rf magnetron sputtering using {0.8(Pb 0.925 La 0.075 )(Zr 0.4 Ti 0.6 ) 0.981 O 3 +0.2PbO} targets and by two-step post deposition annealing after chemical-oxidation treatment using ultrasonic vibrations, and are investigated on c -axis orientation, ferroelectric properties and memory characteristics. The introduction of i-PLZT onto Pt/MgO substrates was effective in performing complete orientation control of films crystallized from amorphous state by post deposition annealing after fabrication of amorphous films and chemical-oxidation treatment. The measurements of electrical properties demonstrated that Pt/PLZT/i-PLZT/Pt/MgO structures exhibited excellent ferroelectric properties and memory characteristics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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