| Autor: |
Patterson, Oliver D., Xiaobin Dong, Oliver D., Khargonekar, Pramod P., Nair, Vijayan N., Grimard, Dennis S. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; Nov2003, Vol. 16 Issue 4, p588-597, 10p |
| Abstrakt: |
The PVVM methodology for feedback variable selection introduced in a companion paper (Patterson et al, 2003) is applied to a gate etch process. The primary purpose of this paper is to illustrate the practical aspects of utilizing this methodology. Particularly attention is given to the challenging task of process modeling. The model-building procedure and constraint-limited exhaustive search is demonstrated to perform superior to other model-building procedures including principal component regression and partial least squares regression for use in this methodology. A second purpose is to present the results for the etch process. Advanced sensors considered for real-time process control of this process include an RF probe, mass spectroscopy and optical emission spectroscopy. Feedback variables are selected to reduce variation in etch rate, non-uniformity and lateral etch rate. The advantages of treating location on the wafer as a disturbance to the etch rate model so that both etch rate and non-uniformity may be cap- to red in one model are presented and experimentally verified. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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