| Autor: |
Hamaguchi, Tatsushi, Fuutagawa, Noriyuki, Izumi, Shouichiro, Murayama, Masahiro, Narui, Hironobu |
| Předmět: |
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| Zdroj: |
Physica Status Solidi. A: Applications & Materials Science; May2016, Vol. 213 Issue 5, p1170-1176, 7p |
| Abstrakt: |
We have achieved continuous-wave (CW) operation of gallium nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs) fabricated by epitaxial lateral overgrowth (ELO) using dielectric distributed Bragg reflectors (DBRs) as masks for selective growth. The GaN VCSELs exhibited CW operation at a wavelength of 453.9 nm, and the maximum output power was 1.1 mW, which is the highest value reported to date. GaN-based materials have presented challenges for obtaining DBRs with high reflectivity and a wide stopband, precise control of the cavity length and a lateral confinement structure to provide laser operation. The proposed VCSEL is immune to these concerns. Its two dielectric DBRs were obtained free from cracks. A high reflectance of more than 99.9% and a stopband with a width of 80-97 nm were obtained for both DBRs. The cavity length was controlled by epitaxial growth to as short as 4.5 µm. An ITO contact electrode on p-type GaN, which is required for a lateral confinement structure, showed electrical reliability under a high current density of 59.6 kA cm−2. The present data demonstrate that the fabrication process adopted here overcomes the shortcomings that have prevented the widespread use of GaN-based VCSELs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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