The growth of pinhole-free epitaxial DySi2-x films on atomically clean Si(111).
| Autor: | Shen, G.H., Chen, J.C. |
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| Zdroj: | Journal of Applied Physics; 10/1/1998, Vol. 84 Issue 7, p3630, 6p |
| Abstrakt: | Examines the implementation of a scheme, taking into account the formation of amorphous interlayer, to grown pinhole-free DySi2-x films. Discusses the mechanism for pinhole formation; Mechanisms proposed for the formation of pinholes; Method used for determining the appropriate thickness of ...-Si capping layer; Conclusion reached on the examination. |
| Databáze: | Complementary Index |
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