| Autor: |
Chandra, K. P., Kulkarni, A. R., Prasad, K. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2016, Vol. 1728 Issue 1, p020179-1-020179-4, 4p, 2 Graphs |
| Abstrakt: |
Lead-free perovskite Ba(Ga1/2Nb1/2)0.25Ti0.75O3 was prepared using conventional ceramic technique at 1450°C/5h in air atmosphere and characterized by X-ray diffraction, scanning electron microscopy, dielectric and impedance studies. The crystal symmetry, space group and unit cell dimensions were derived from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space groupPm3m(221). EDX and SEM studies were carried to study the quality and purity of the compound. Partial replacement of Ti4+ with pseudo-cation(Ga3+3/2Nb3+3/2)4+ significantly reduces the dielectric constant as well as loss tangent values and improves the frequency and temperature stability of the dielectric properties and exhibited a low value of temperature coefficient of capacitance (<±7%) in the working temperature range (up to +125°C), which meets the specifications for 'Z5R' of Class I dielectrics of Electronic Industries Association. Hence, this compound might be a suitable candidate for capacitor applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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