| Autor: |
Fellahi, Nabil, Addou, Mohammed, Kachouane, Amina, El Jouad, Mohamed, Sofiani, Zouhair |
| Zdroj: |
European Physical Journal - Applied Physics; May2016, Vol. 74 Issue 2, pp1-p6, 6p |
| Abstrakt: |
Tin-doped indium oxide (In2O3:Sn) thin films in different concentrations (Sn = 0, 3, 5, 8 at.%) were deposited by reactive chemical pulverisation spray pyrolysis on heated glass substrates at 500 ²C. The effect of the tin dopant on the nonlinear optical properties was investigated using X-ray diffraction, transmission, electrical resistivity and third harmonic generation (THG). All films were polycrystalline, and crystallised in a cubic structure with a preferential orientation along the (4 0 0) direction. The Sn (5 at.%) doped In2O3 thin films exhibited a lower resistivity of 3 x 10-4 Ω cm, and higher transmission in the visible region of about 94%. Optical parameters, such as the extinction coefficient (k), refractive index (n) and energy band gap (Eg), were also studied to show the composition-dependence of tin-doped indium oxide films. The nonlinear properties of the In2O3:Sn thin films have been found to be influenced by doping concentration, and the best value of χ(3) = 3 x 10-11 (esu) was found for the 5 at.% doped sample. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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